Encapsulation parameters/Encapsulation: TO-251
External dimensions/packaging: TO-251
Other/FET types: P-Channel
Other/Vgs (maximum value): ±20V
Other/Rds On (Max) @ Id, Vgs: 1.2 Ohms @ 1.9A,10V
Other/continuous drain current Id: 3.1A(Tc)
Other/drain source voltage Vds: 100V
Other/working temperature: -55℃~150℃
Other/Packaging/Shell: TO-251AA
Other/Vgs (th): 4V @ 250uA
Other/Pd - power dissipation (Max): 2.5W(Ta),25W(Tc)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
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