Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -6.60 A
Technical parameters/drain source resistance: 0.48 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 40 W
Technical parameters/product series: IRFU9120N
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: -100 V
Technical parameters/Continuous drain current (Ids): -6.60 A
Technical parameters/rise time: 47.0 ns
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/rated power (Max): 40 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.73 mm
External dimensions/height: 6.22 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFU9120
|
International Rectifier | 功能相似 | Through Hole |
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
|
||
IRFU9120
|
Vishay Semiconductor | 功能相似 | 3 |
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
|
||
IRFU9120
|
Fairchild | 功能相似 |
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
|
|||
IRFU9120
|
Harris | 功能相似 |
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
|
|||
IRFU9120N
|
Infineon | 类似代替 | TO-251-3 |
IPAK P-CH 100V 6.6A
|
||
IRFU9120N
|
International Rectifier | 类似代替 | TO-251 |
IPAK P-CH 100V 6.6A
|
||
|
|
LiteOn | 功能相似 | IPAK-3 |
功率MOSFET Power MOSFET
|
||
IRFU9120PBF
|
International Rectifier | 功能相似 |
功率MOSFET Power MOSFET
|
|||
IRFU9120PBF
|
Vishay Intertechnology | 功能相似 |
功率MOSFET Power MOSFET
|
|||
IRFU9120PBF
|
Vishay Precision Group | 功能相似 | TO-251 |
功率MOSFET Power MOSFET
|
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