Technical parameters/dissipated power: 83000 mW
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 340pF @25V(Vds)
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 83W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Samsung | 功能相似 |
Fsc Irfu420a-Tu Trans Mosfet n-Ch 500V 3.3A 3to-251aa t/r
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IRFU420A
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VISHAY | 功能相似 | IPAK |
Fsc Irfu420a-Tu Trans Mosfet n-Ch 500V 3.3A 3to-251aa t/r
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IRFU420A
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International Rectifier | 功能相似 |
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