Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 3.30 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 83.0 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 3.30 A
Technical parameters/rise time: 12.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251
External dimensions/packaging: TO-251
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Samsung | 功能相似 |
Fsc Irfu420a-Tu Trans Mosfet n-Ch 500V 3.3A 3to-251aa t/r
|
|||
IRFU420A
|
VISHAY | 功能相似 | IPAK |
Fsc Irfu420a-Tu Trans Mosfet n-Ch 500V 3.3A 3to-251aa t/r
|
||
IRFU420A
|
International Rectifier | 功能相似 |
Fsc Irfu420a-Tu Trans Mosfet n-Ch 500V 3.3A 3to-251aa t/r
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