Technical parameters/drain source resistance: 0.00165 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 375 W
Technical parameters/threshold voltage: 3.7 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 230 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: D2PAK-263
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 11.33 mm
External dimensions/packaging: D2PAK-263
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDB024N06
|
Fairchild | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FDB024N06 晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0018 ohm, 10 V, 3.5 V
|
||
IRFS7530PBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRFS7530PBF 晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
|
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