Technical parameters/dissipated power: 2.5W (Ta), 42W (Tc)
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/dissipated power (Max): 2.5W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
|||
IRFU320
|
Vishay Siliconix | 功能相似 | TO-251-3 |
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
IRFU320
|
Vishay Semiconductor | 功能相似 |
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
|||
IRFU320PBF
|
International Rectifier | 完全替代 | TO-251 |
Trans MOSFET N-CH 400V 3.1A 3Pin(3+Tab) IPAK
|
||
IRFU320PBF
|
LiteOn | 完全替代 | IPAK-3 |
Trans MOSFET N-CH 400V 3.1A 3Pin(3+Tab) IPAK
|
||
IRFU320PBF
|
Infineon | 完全替代 | TO-251 |
Trans MOSFET N-CH 400V 3.1A 3Pin(3+Tab) IPAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review