Technical parameters/dissipated power: 25W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 180pF @25V(Vds)
Technical parameters/dissipated power (Max): 25W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
LiteOn | 完全替代 | IPAK-3 |
TRANSISTOR 4.3A, 100V, 0.54Ω, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power
|
||
IRFU110PBF
|
Vishay Semiconductor | 完全替代 | TO-251 |
TRANSISTOR 4.3A, 100V, 0.54Ω, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power
|
||
IRFU110PBF
|
VISHAY | 完全替代 | TO-251-3 |
TRANSISTOR 4.3A, 100V, 0.54Ω, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power
|
||
IRFU110PBF
|
Vishay Dale | 完全替代 |
TRANSISTOR 4.3A, 100V, 0.54Ω, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power
|
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