Technical parameters/rated voltage (DC): 150 V
Technical parameters/rated current: 33.0 A
Technical parameters/drain source resistance: 0.056 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.8 W
Technical parameters/product series: IRFSL33N15D
Technical parameters/threshold voltage: 5.5 V
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/leakage source breakdown voltage: 150 V
Technical parameters/Continuous drain current (Ids): 33.0 A
Technical parameters/rise time: 38 ns
Technical parameters/Input capacitance (Ciss): 2020pF @25V(Vds)
Technical parameters/descent time: 21 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3800 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-262
External dimensions/packaging: TO-262
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFSL4615PBF
|
Infineon | 功能相似 | TO-262-3 |
INFINEON IRFSL4615PBF. 场效应管, MOSFET, N沟道, 150V, 33A, TO-262
|
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