Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 7.70 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 25.0 W
Technical parameters/drain source voltage (Vds): 60.0 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/Continuous drain current (Ids): 7.70 A
Technical parameters/rise time: 50.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR014PBF
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR014PBF
|
Vishay Intertechnology | 功能相似 | TO-252 |
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR014PBF
|
VISHAY | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR014PBF
|
Kersemi Electronic | 功能相似 |
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
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