Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 96.0 A
Technical parameters/drain source resistance: 8.00 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 250W (Tc)
Technical parameters/product series: IRFS4410
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100V (min)
Technical parameters/Continuous drain current (Ids): 96.0 A
Technical parameters/rise time: 80 ns
Technical parameters/Input capacitance (Ciss): 5150pF @50V(Vds)
Technical parameters/descent time: 50 ns
Technical parameters/dissipated power (Max): 250W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFS4410PBF
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International Rectifier | 类似代替 | TO-263-3 |
N 通道功率 MOSFET 80A 至 99A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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PSMN009-100B,118
|
Nexperia | 功能相似 | TO-263-3 |
D2PAK N-CH 100V 75A
|
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