Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 9.40 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 86W (Tc)
Technical parameters/product series: IRFR9N20D
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 9.40 A
Technical parameters/rise time: 16.0 ns
Technical parameters/Input capacitance (Ciss): 560pF @25V(Vds)
Technical parameters/dissipated power (Max): 86W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR9N20DTRLPBF
|
International Rectifier | 类似代替 | DPAK-252 |
场效应管(MOSFET) IRFR9N20DTRLPBF DPAK
|
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