Technical parameters/dissipated power: 2.5W (Ta), 25W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 200pF @25V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 25W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR9110
|
VISHAY | 完全替代 | TO-252 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRLPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRLPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRLPBF
|
Vishay Intertechnology | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRPBF
|
International Rectifier | 完全替代 | TO-252 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRPBF
|
Vishay Intertechnology | 完全替代 | TO-252 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9120NPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRFR9120NPBF 晶体管, MOSFET, P沟道, 6.6 A, -100 V, 480 mohm, -10 V, -4 V
|
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