Technical parameters/rated power: 57 W
Technical parameters/drain source resistance: 0.031 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 57 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 33A
Technical parameters/rise time: 99 ns
Technical parameters/Input capacitance (Ciss): 750pF @25V(Vds)
Technical parameters/descent time: 28 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 57W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR3303
|
Infineon | 功能相似 | TO-252 |
DPAK N-CH 30V 33A
|
||
IRFR3303
|
International Rectifier | 功能相似 |
DPAK N-CH 30V 33A
|
|||
IRFR3303TRPBF
|
International Rectifier | 类似代替 | TO-252-3 |
单 N沟道 30 V 57 W 29 nC 功率Mosfet 表面贴装 - TO-252AA
|
||
IRFR3303TRPBF
|
Infineon | 类似代替 | TO-252-3 |
单 N沟道 30 V 57 W 29 nC 功率Mosfet 表面贴装 - TO-252AA
|
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