Technical parameters/drain source resistance: 0.58 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 110 W
Technical parameters/product series: IRFR6215
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/leakage source breakdown voltage: -150 V
Technical parameters/Continuous drain current (Ids): -13.0 A
Technical parameters/Input capacitance (Ciss): 860pF @25V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR6215PBF
|
International Rectifier | 完全替代 | TO-252-3 |
INFINEON IRFR6215PBF 晶体管, MOSFET, P沟道, 13 A, -150 V, 295 mohm, -10 V, -4 V
|
||
|
|
IFC | 完全替代 |
INFINEON IRFR6215TRPBF 晶体管, MOSFET, P沟道, -13 A, -150 V, 295 mohm, -10 V, -4 V
|
|||
IRFR6215TRPBF
|
Infineon | 完全替代 | TO-252-3 |
INFINEON IRFR6215TRPBF 晶体管, MOSFET, P沟道, -13 A, -150 V, 295 mohm, -10 V, -4 V
|
||
IRFR6215TRRPBF
|
Infineon | 类似代替 | TO-252-3 |
场效应管(MOSFET) IRFR6215TRRPBF DPAK
|
||
IRFR6215TRRPBF
|
International Rectifier | 类似代替 | TO-252-3 |
场效应管(MOSFET) IRFR6215TRRPBF DPAK
|
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