Technical parameters/drain source resistance: 0.14 Ω
Technical parameters/dissipated power: 190 W
Technical parameters/input capacitance: 2700pF @25V
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/leakage source breakdown voltage: 250 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP254
|
International Rectifier | 完全替代 |
MOSFET N-CH 250V 23A TO-247AC
|
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IRFP254PBF
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 23A I(D), 250V, 0.14Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
|
|||
IRFP254PBF
|
Vishay Siliconix | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 23A I(D), 250V, 0.14Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
|
||
IRFP254PBF
|
Vishay Precision Group | 功能相似 | TO-247 |
Power Field-Effect Transistor, 23A I(D), 250V, 0.14Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
|
||
IRFP254PBF
|
LiteOn | 功能相似 | TO-247 |
Power Field-Effect Transistor, 23A I(D), 250V, 0.14Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
|
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