Technical parameters/drain source resistance: 2.60 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 2.30 A
Technical parameters/Input capacitance (Ciss): 610pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/dissipated power (Max): 2.5W (Ta), 41W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD3NK50ZT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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