Technical parameters/rated current: 86.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0052 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 79 W
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 86A
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 2330pF @15V(Vds)
Technical parameters/descent time: 3.9 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 79W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR3709ZPBF
|
International Rectifier | 类似代替 | TO-252-3 |
MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
||
IRFR3709ZTRPBF
|
Infineon | 类似代替 | TO-252-3 |
N沟道,30V,86A,8.2mΩ@4.5V
|
||
IRLR8726PBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRLR8726PBF 晶体管, MOSFET, N沟道, 25 A, 30 V, 0.004 ohm, 10 V, 1.8 V
|
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