Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 41.0 A
Technical parameters/rated power: 180 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.055 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 230 W
Technical parameters/threshold voltage: 2 V
Technical parameters/input capacitance: 2800pF @25V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 41.0 A
Technical parameters/rise time: 120 ns
Technical parameters/Input capacitance (Ciss): 2800pF @25V(Vds)
Technical parameters/descent time: 81 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 230 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/length: 15.87 mm
External dimensions/width: 5.31 mm
External dimensions/height: 20.82 mm
External dimensions/packaging: TO-247
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Commercial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP150NPBF
|
Infineon | 功能相似 | TO-247-3 |
INFINEON IRFP150NPBF 晶体管, MOSFET, 通用, N沟道, 42 A, 100 V, 36 mohm, 10 V, 4 V
|
||
IRFP150NPBF
|
IFA | 功能相似 |
INFINEON IRFP150NPBF 晶体管, MOSFET, 通用, N沟道, 42 A, 100 V, 36 mohm, 10 V, 4 V
|
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