Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/FET types: N-Channel
Other/Vgs (maximum value): ±20V
Other/Rds On (Max) @ Id, Vgs: 1.5 Ohms @ 1.6A,10V
Other/continuous drain current Id: 2.6A(Tc)
Other/drain source voltage Vds: 200V
Other/working temperature: -55℃~150℃
Other/Packaging/Shell: TO-252-3
Other/Vgs (th): 4V @ 250uA
Other/Pd - power dissipation (Max): 2.5W(Ta),25W(Tc)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR210PBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET N-CH 200V 2.6A DPAK
|
||
IRFR210PBF
|
Vishay Intertechnology | 完全替代 | TO-252 |
MOSFET N-CH 200V 2.6A DPAK
|
||
IRFR210PBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 200V 2.6A DPAK
|
||
IRFR210PBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 200V 2.6A DPAK
|
||
IRFR210TRLPBF
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
|
IRFR210TRLPBF
|
Vishay Intertechnology | 功能相似 | DPAK |
Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR210TRPBF
|
Vishay Intertechnology | 功能相似 | DPAK |
Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
|
||
IRFR210TRPBF
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
|
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