Technical parameters/drain source resistance: 1.50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 2.70 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: DPAK-252
External dimensions/packaging: DPAK-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR210PBF
|
Vishay Semiconductor | 功能相似 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRFR210PBF
|
Vishay Intertechnology | 功能相似 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRFR210PBF
|
Vishay Siliconix | 功能相似 | TO-252-3 |
功率MOSFET Power MOSFET
|
||
IRFR210PBF
|
VISHAY | 功能相似 | TO-252-3 |
功率MOSFET Power MOSFET
|
||
IRFR210TRPBF
|
Vishay Intertechnology | 功能相似 | DPAK |
功率MOSFET Power MOSFET
|
||
IRFR210TRPBF
|
Vishay Siliconix | 功能相似 | TO-252-3 |
功率MOSFET Power MOSFET
|
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