Technical parameters/rated voltage (DC): 800 V
Technical parameters/rated current: 5.40 A
Technical parameters/rated power: 150 W
Technical parameters/drain source resistance: 2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/leakage source breakdown voltage: 800 V
Technical parameters/Continuous drain current (Ids): 5.40 A
Technical parameters/rise time: 36 ns
Technical parameters/Input capacitance (Ciss): 1900pF @25V(Vds)
Technical parameters/rated power (Max): 150 W
Technical parameters/descent time: 32 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.87 mm
External dimensions/width: 5.31 mm
External dimensions/height: 20.7 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW8NK80Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW8NK80Z 功率场效应管, MOSFET, N沟道, 6.2 A, 800 V, 1.5 ohm, 10 V, 3.75 V
|
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