Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 3 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 17A
Technical parameters/rise time: 32 ns
Technical parameters/Input capacitance (Ciss): 910pF @25V(Vds)
Technical parameters/descent time: 8.9 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3W (Ta), 140W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR15N20DPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRFR15N20DPBF 晶体管, MOSFET, N沟道, 17 A, 200 V, 165 mohm, 10 V, 5.5 V
|
||
IRFR15N20DTRPBF
|
International Rectifier | 完全替代 | DPAK |
晶体管, MOSFET, SMPS, N沟道, 17 A, 200 V, 0.165 ohm, 10 V, 5.5 V
|
||
IRFR15N20DTRPBF
|
Infineon | 完全替代 | TO-252-3 |
晶体管, MOSFET, SMPS, N沟道, 17 A, 200 V, 0.165 ohm, 10 V, 5.5 V
|
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