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Description Field Effect Transistor (MOSFET) IRFR120NTRRPBF DPAK
Product QR code
Brand: Infineon
Packaging TO-252-3
Delivery time
Packaging method
Standard packaging quantity 1
0.5  yuan 0.5yuan
20+:
$ 0.6696
50+:
$ 0.6200
100+:
$ 0.5952
300+:
$ 0.5754
500+:
$ 0.5605
1000+:
$ 0.5506
5000+:
$ 0.5406
10000+:
$ 0.5307
Quantity
20+
50+
100+
300+
500+
Price
$0.6696
$0.6200
$0.5952
$0.5754
$0.5605
Price $ 0.6696 $ 0.6200 $ 0.5952 $ 0.5754 $ 0.5605
Start batch production 20+ 50+ 100+ 300+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(6205) Minimum order quantity(20)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 48W (Tc)

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Continuous drain current (Ids): 9.4A

Technical parameters/Input capacitance (Ciss): 330pF @25V(Vds)

Technical parameters/dissipated power (Max): 48W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Other/Product Lifecycle: Not Recommended for New Designs

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFR120NPBF IRFR120NPBF International Rectifier 类似代替 TO-252-3
INFINEON IRFR120NPBF 晶体管, MOSFET, N沟道, 9.1 A, 100 V, 210 mohm, 10 V, 4 V
PDF
IRFR120NPBF IRFR120NPBF Infineon 类似代替 TO-252-3
INFINEON IRFR120NPBF 晶体管, MOSFET, N沟道, 9.1 A, 100 V, 210 mohm, 10 V, 4 V
PDF
IRFR120NTRPBF IRFR120NTRPBF IFA 类似代替
INFINEON IRFR120NTRPBF 晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V
PDF
IRFR120NTRPBF IRFR120NTRPBF Infineon 类似代替 TO-252-3
INFINEON IRFR120NTRPBF 晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V
PDF
IRFR120NTRPBF IRFR120NTRPBF International Rectifier 类似代替 TO-252-3
INFINEON IRFR120NTRPBF 晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V
PDF

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