Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 48W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 9.4A
Technical parameters/Input capacitance (Ciss): 330pF @25V(Vds)
Technical parameters/dissipated power (Max): 48W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Not Recommended for New Designs
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR120NPBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRFR120NPBF 晶体管, MOSFET, N沟道, 9.1 A, 100 V, 210 mohm, 10 V, 4 V
|
||
IRFR120NPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRFR120NPBF 晶体管, MOSFET, N沟道, 9.1 A, 100 V, 210 mohm, 10 V, 4 V
|
||
IRFR120NTRPBF
|
IFA | 类似代替 |
INFINEON IRFR120NTRPBF 晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V
|
|||
IRFR120NTRPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRFR120NTRPBF 晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V
|
||
IRFR120NTRPBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRFR120NTRPBF 晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V
|
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