Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 7.70 A
Technical parameters/drain source resistance: 200 mΩ (max)
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 25.0 W
Technical parameters/leakage source breakdown voltage: 60.0V (min)
Technical parameters/Continuous drain current (Ids): 7.70 A
Technical parameters/rise time: 50.0 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
IRF | 功能相似 |
INFINEON IRF2804PBF 晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
|
|||
IRF2804PBF
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IRF2804PBF 晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
|
||
IRF2804PBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRF2804PBF 晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
|
||
IRF3710PBF
|
International | 功能相似 | Through Hole |
INFINEON IRF3710PBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
|
||
IRF3710PBF
|
IFC | 功能相似 |
INFINEON IRF3710PBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
|
|||
IRF3710PBF
|
IFA | 功能相似 |
INFINEON IRF3710PBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
|
|||
IRFR014PBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 60V 7.7A DPAK
|
||
IRFR014PBF
|
Vishay Intertechnology | 完全替代 | TO-252 |
MOSFET N-CH 60V 7.7A DPAK
|
||
IRFR014PBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 60V 7.7A DPAK
|
||
IRFR014PBF
|
Kersemi Electronic | 完全替代 |
MOSFET N-CH 60V 7.7A DPAK
|
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