Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 46.0 A
Technical parameters/rated power: 540 W
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 540 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 46.0 A
Technical parameters/rise time: 170 ns
Technical parameters/Input capacitance (Ciss): 8110pF @25V(Vds)
Technical parameters/rated power (Max): 540 W
Technical parameters/descent time: 69 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-274
External dimensions/packaging: TO-274
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH60N50P3
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
IXYS SEMICONDUCTOR IXFH60N50P3 晶体管, MOSFET, N沟道, 60 A, 500 V, 0.1 ohm, 10 V, 5 V
|
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