Technical parameters/rated voltage (DC): -200 V
Technical parameters/rated current: -12.0 A
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: -200 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Technical parameters/rise time: 43.0 ns
Encapsulation parameters/installation method: Through Hole
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP9240PBF
|
Vishay Precision Group | 完全替代 | TO-247 |
Trans MOSFET P-CH 200V 12A 3Pin(3+Tab) TO-247AC
|
||
IRFP9240PBF
|
VISHAY | 完全替代 | TO-247-3 |
Trans MOSFET P-CH 200V 12A 3Pin(3+Tab) TO-247AC
|
||
IRFP9240PBF
|
International Rectifier | 完全替代 | TO-247 |
Trans MOSFET P-CH 200V 12A 3Pin(3+Tab) TO-247AC
|
||
IRFP9240PBF
|
Infineon | 完全替代 |
Trans MOSFET P-CH 200V 12A 3Pin(3+Tab) TO-247AC
|
|||
IRFP9240PBF
|
Vishay Semiconductor | 完全替代 | TO-247-3 |
Trans MOSFET P-CH 200V 12A 3Pin(3+Tab) TO-247AC
|
||
SIHFP9240
|
Vishay Siliconix | 功能相似 | TO-247 |
TRANSISTOR 12 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN, FET General Purpose Power
|
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