Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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IRF | 功能相似 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.27Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
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IRFP460PBF
|
Vishay Semiconductor | 功能相似 | TO-247 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.27Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
|
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IRFP460PBF
|
VISHAY | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.27Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
|
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IRFP460PBF
|
LiteOn | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.27Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
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