Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 20.0 A
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 20.0 A
Technical parameters/rise time: 59.0 ns
Encapsulation parameters/installation method: Through Hole
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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IRF | 功能相似 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.27Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
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IRFP460PBF
|
Vishay Semiconductor | 功能相似 | TO-247 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.27Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
|
||
IRFP460PBF
|
VISHAY | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.27Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
|
||
IRFP460PBF
|
LiteOn | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.27Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
|
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