Technical parameters/dissipated power: 180 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)
Technical parameters/rated power (Max): 180 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
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Vishay Semiconductor | 功能相似 |
19A, 100V, 0.2Ω, P-Channel Power MOSFET
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Intersil | 功能相似 |
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|
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|
VISHAY | 功能相似 | TO-247-3 |
19A, 100V, 0.2Ω, P-Channel Power MOSFET
|
||
|
|
International Rectifier | 完全替代 |
MOSFET P-CH 100V 21A TO-247AC
|
|||
IRFP9140PBF
|
Vishay Semiconductor | 完全替代 | TO-247 |
MOSFET P-CH 100V 21A TO-247AC
|
||
IRFP9140PBF
|
LiteOn | 完全替代 |
MOSFET P-CH 100V 21A TO-247AC
|
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