Technical parameters/rated power: 2.8 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0462 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.8 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 5.1A
Technical parameters/rise time: 21 ns
Technical parameters/Input capacitance (Ciss): 340pF @25V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 23 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.8 mm
External dimensions/packaging: TO-261-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Load Switch High Side
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL024ZPBF
|
IRF | 功能相似 |
INFINEON IRFL024ZPBF 晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
|
|||
IRFL024ZPBF
|
Infineon | 功能相似 | TO-261-4 |
INFINEON IRFL024ZPBF 晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
|
||
IRFL024ZPBF
|
International Rectifier | 功能相似 | TO-261-4 |
INFINEON IRFL024ZPBF 晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
|
||
STN3NF06L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN3NF06L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
|
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