Technical parameters/dissipated power: 190W (Tc)
Technical parameters/drain source voltage (Vds): 450 V
Technical parameters/Input capacitance (Ciss): 2700pF @25V(Vds)
Technical parameters/dissipated power (Max): 190W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP450
|
Vishay Siliconix | 类似代替 | TO-247-3 |
MOSFET N-CH 500V 14A TO-247AC
|
||
IRFP450
|
Major Brands | 类似代替 | TO-247 |
MOSFET N-CH 500V 14A TO-247AC
|
||
IRFP450
|
VISHAY | 类似代替 | TO-247-3 |
MOSFET N-CH 500V 14A TO-247AC
|
||
IRFP450
|
IXYS Semiconductor | 类似代替 | TO-3-3 |
MOSFET N-CH 500V 14A TO-247AC
|
||
|
|
International Rectifier | 类似代替 |
MOSFET N-CH 500V 14A TO-247AC
|
|||
IRFP450LC
|
IRF | 类似代替 |
MOSFET N-CH 500V 14A TO-247AC
|
|||
IRFP450LC
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 500V 14A TO-247AC
|
|||
IRFP450LC
|
VISHAY | 类似代替 | TO-247-3 |
MOSFET N-CH 500V 14A TO-247AC
|
||
IRFP450PBF
|
VISHAY | 类似代替 | TO-247-3 |
Power Field-Effect Transistor, 14A I(D), 500V, 0.4Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
|
||
IRFP450PBF
|
Vishay Precision Group | 类似代替 | TO-247 |
Power Field-Effect Transistor, 14A I(D), 500V, 0.4Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
|
||
IRFP450PBF
|
Vishay Semiconductor | 类似代替 | TO-247 |
Power Field-Effect Transistor, 14A I(D), 500V, 0.4Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
|
||
IRFP450PBF
|
Vishay Siliconix | 类似代替 | TO-247-3 |
Power Field-Effect Transistor, 14A I(D), 500V, 0.4Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
|
||
IRFP450PBF
|
International Rectifier | 类似代替 | TO-247 |
Power Field-Effect Transistor, 14A I(D), 500V, 0.4Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
|
||
IRFP450PBF
|
Infineon | 类似代替 | TO-247 |
Power Field-Effect Transistor, 14A I(D), 500V, 0.4Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
|
||
IRFP450PBF
|
LiteOn | 类似代替 | TO-247-3 |
Power Field-Effect Transistor, 14A I(D), 500V, 0.4Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
|
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