Technical parameters/rated voltage (DC): 250 V
Technical parameters/rated current: 60.0 A
Technical parameters/rated power: 430 W
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 430 W
Technical parameters/product series: IRFP4232
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Continuous drain current (Ids): 60.0 A
Technical parameters/Input capacitance (Ciss): 7290pF @25V(Vds)
Technical parameters/rated power (Max): 430 W
Technical parameters/dissipated power (Max): 430 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQA28N15
|
Fairchild | 功能相似 | TO-3-3 |
FAIRCHILD SEMICONDUCTOR FQA28N15 晶体管, MOSFET, N沟道, 33 A, 150 V, 0.067 ohm, 10 V, 4 V
|
||
FQA28N15
|
Freescale | 功能相似 | TO-3-3 |
FAIRCHILD SEMICONDUCTOR FQA28N15 晶体管, MOSFET, N沟道, 33 A, 150 V, 0.067 ohm, 10 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review