Technical parameters/drain source resistance: 77 mΩ
Technical parameters/dissipated power: 180000 mW
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 44 ns
Technical parameters/Input capacitance (Ciss): 1700pF @25V(Vds)
Technical parameters/descent time: 43 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 180W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
IRF | 功能相似 |
Power Field-Effect Transistor, 31A I(D), 100V, 0.077Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
|
|||
IRFP140PBF
|
LiteOn | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 31A I(D), 100V, 0.077Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
|
||
IRFP140PBF
|
Vishay Siliconix | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 31A I(D), 100V, 0.077Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review