Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/drain source resistance: 46.2 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1W (Ta)
Technical parameters/product series: IRFL024Z
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0V (min)
Technical parameters/Continuous drain current (Ids): 5.10 A
Technical parameters/rise time: 21.0 ns
Technical parameters/Input capacitance (Ciss): 340pF @25V(Vds)
Technical parameters/dissipated power (Max): 1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Load Switch High Side
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL024ZPBF
|
IRF | 类似代替 |
INFINEON IRFL024ZPBF 晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
|
|||
IRFL024ZPBF
|
Infineon | 类似代替 | TO-261-4 |
INFINEON IRFL024ZPBF 晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
|
||
IRFL024ZPBF
|
International Rectifier | 类似代替 | TO-261-4 |
INFINEON IRFL024ZPBF 晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
|
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