Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 1.90 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.10 W
Technical parameters/product series: IRFL014N
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0 V
Technical parameters/Continuous drain current (Ids): 1.90 A
Technical parameters/rise time: 7.1 ns
Technical parameters/Input capacitance (Ciss): 190pF @25V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 3.3 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL014
|
Vishay Intertechnology | 功能相似 | SOT-223-3 |
Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
|
||
IRFL014
|
Vishay Siliconix | 功能相似 | SOT-223-3 |
Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
|
||
IRFL014NTRPBF
|
International Rectifier | 功能相似 | TO-261-4 |
INFINEON IRFL014NTRPBF 晶体管, MOSFET, N沟道, 1.9 A, 55 V, 0.16 ohm, 10 V, 4 V
|
||
IRFL014NTRPBF
|
Infineon | 功能相似 | TO-261-4 |
INFINEON IRFL014NTRPBF 晶体管, MOSFET, N沟道, 1.9 A, 55 V, 0.16 ohm, 10 V, 4 V
|
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