Technical parameters/rated voltage (DC): 900 V
Technical parameters/rated current: 1.90 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 3.7 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 35 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 1200pF @25V
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/leakage source breakdown voltage: 900 V
Technical parameters/Continuous drain current (Ids): 1.90 A
Technical parameters/rise time: 25 ns
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 35 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.63 mm
External dimensions/width: 4.83 mm
External dimensions/height: 16.12 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP3NK90ZFP
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP3NK90ZFP 功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.8 ohm, 10 V, 3.75 V
|
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