Technical parameters/rated voltage (DC): 150 V
Technical parameters/rated current: 41.0 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 45 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/product series: IRFIB41N15D
Technical parameters/threshold voltage: 5.5 V
Technical parameters/input capacitance: 2520pF @25V
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/leakage source breakdown voltage: 150 V
Technical parameters/Continuous drain current (Ids): 41.0 A
Technical parameters/rise time: 63.0 ns
Technical parameters/Input capacitance (Ciss): 2520pF @25V(Vds)
Technical parameters/rated power (Max): 48 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.63 mm
External dimensions/height: 16.12 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFI540GPBF
|
International Rectifier | 功能相似 |
功率MOSFET Power MOSFET
|
|||
IRFI540GPBF
|
VISHAY | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
IRFI540GPBF
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review