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Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Delete 동업체: Vishay
Other/Delete 품카테 High speed: MOSFETs
Other/Delete: General Purpose MOSFETs
Other/궟동: Single
Other/Case/Package: TO-220
Other/Soft 랜イ동터극동: P-Channel
Other/ハ레イ?동항복압: 100 V
Other/Link Files 레イ류: 11 A
Other/력발산: 48000 mW
Other/저항 Drain Source RDS (on): 0.2 Ohm @ 10 V
Other/Typical 하강: 86 ns
Other/Typical 상승: 110 ns
Other/표준오프い Contact Us: 51 ns
Other/ị동: TUBE
Other/게イSoft - ?동항복압: 20 V
Other/동대작동온도: 175 C
Other/π소작동온도: 55 C
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFI9540G
|
IRF | 完全替代 |
MOSFET P-CH 100V 11A TO220FP
|
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|
IFA | 功能相似 |
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 93Milliohms; ID -14A; TO-220 Full-Pak; PD 33W
|
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IRLIB9343PBF
|
Infineon | 功能相似 | TO-220-3 |
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 93Milliohms; ID -14A; TO-220 Full-Pak; PD 33W
|
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