Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 40 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Continuous drain current (Ids): 5.4A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 1200pF @25V(Vds)
Technical parameters/descent time: 24 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 40000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP11NK40ZFP
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review