Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 9.80 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 40.0 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200V (min)
Technical parameters/Continuous drain current (Ids): 9.80 A
Technical parameters/rise time: 51.0 ns
Encapsulation parameters/installation method: Through Hole
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFI640GPBF
|
VISHAY | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 200V 9.8A 3Pin(3+Tab) TO-220 Full-Pak
|
||
|
|
LiteOn | 完全替代 | TO-220 |
Trans MOSFET N-CH 200V 9.8A 3Pin(3+Tab) TO-220 Full-Pak
|
||
IRFI640GPBF
|
Vishay Semiconductor | 完全替代 | TO-220 |
Trans MOSFET N-CH 200V 9.8A 3Pin(3+Tab) TO-220 Full-Pak
|
||
IRFI640GPBF
|
Vishay Siliconix | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 200V 9.8A 3Pin(3+Tab) TO-220 Full-Pak
|
||
IRFI640GPBF
|
Vishay Intertechnology | 完全替代 | TO-220 |
Trans MOSFET N-CH 200V 9.8A 3Pin(3+Tab) TO-220 Full-Pak
|
||
IRFI640GPBF
|
International Rectifier | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 200V 9.8A 3Pin(3+Tab) TO-220 Full-Pak
|
||
|
|
ST Microelectronics | 功能相似 | TO-220 |
N沟道200V - 0.15ohm - 19A - TO- 220 / TO- 220FP / I2PAK PowerMESH⑩ MOSFET N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH⑩ MOSFET
|
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