Technical parameters/dissipated power: 1.3 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 68 ns
Technical parameters/Input capacitance (Ciss): 570pF @25V(Vds)
Technical parameters/rated power (Max): 1.3 W
Technical parameters/descent time: 29 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.3W (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9024
|
VISHAY | 功能相似 | DIP-4 |
MOSFET P-CH 60V 1.6A 4-DIP
|
||
IRFD9024
|
Vishay Semiconductor | 功能相似 | HVMDIP-4 |
MOSFET P-CH 60V 1.6A 4-DIP
|
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