Technical parameters/number of pins: 5
Technical parameters/drain source resistance: 0.048 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 14 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 11A
Technical parameters/rise time: 2 ns
Technical parameters/Input capacitance (Ciss): 320pF @50V(Vds)
Technical parameters/rated power (Max): 14 W
Technical parameters/descent time: 3.4 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 14000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: TO-220-5
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 9.02 mm
External dimensions/packaging: TO-220-5
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFI4212H-117P
|
Infineon | 类似代替 | TO-220-5 |
INFINEON IRFI4212H-117P 晶体管, MOSFET, N沟道, 11 A, 100 V, 58 mohm, 10 V, 5 V
|
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