Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 0.35 Ω
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 1 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/Continuous drain current (Ids): 1.1A
Technical parameters/rise time: 47 ns
Technical parameters/descent time: 39 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/length: 6.9 mm
External dimensions/width: 3.8 mm
External dimensions/height: 3.8 mm
External dimensions/packaging: DIP-4
Other/Product Lifecycle: Active
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9010
|
Vishay Semiconductor | 完全替代 | DIP |
MOSFET P-CH 50V 1.1A 4-DIP
|
||
IRFD9010
|
Infineon | 完全替代 | HexDIP |
MOSFET P-CH 50V 1.1A 4-DIP
|
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