Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Other/FET types: P-Channel
Other/Vgs (maximum value): ±20V
Other/Rds On (Max) @ Id, Vgs: 1.5 Ohms @ 1.5A,10V
Other/continuous drain current Id: 3.5A(Tc)
Other/drain source voltage Vds: 200V
Other/working temperature: -55℃~150℃
Other/Packaging/Shell: TO-263AB
Other/Vgs (th): 4V @ 250uA
Other/Pd - power dissipation (Max): 3W(Ta),40W(Tc)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
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