Technical parameters/rated power: 2.8 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0094 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.8 W
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 12A
Technical parameters/Input capacitance (Ciss): 755pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 2.8W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PQFN-8
External dimensions/width: 5 mm
External dimensions/packaging: PQFN-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Isolated Secondary Side SyncRec MOSFETs, Isolated Primary Side MOSFETs, Point of Load ControlFET, Battery Protection, Load Switch Low Side, Load Switch High Side
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFH3707TR2PBF
|
Infineon | 类似代替 | PQFN-8 |
INFINEON IRFH3707TR2PBF 晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0094 ohm, 10 V, 1.8 V
|
||
IRFH3707TR2PBF
|
International Rectifier | 类似代替 | PowerVDFN-8 |
INFINEON IRFH3707TR2PBF 晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0094 ohm, 10 V, 1.8 V
|
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