Technical parameters/dissipated power: 1W (Ta)
Technical parameters/Input capacitance (Ciss): 170pF @25V(Vds)
Technical parameters/dissipated power (Max): 1W (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9210
|
International Rectifier | 类似代替 | DIP |
MOSFET P-CH 200V 0.4A 4-DIP
|
||
IRFD9210
|
VISHAY | 类似代替 | DIP-4 |
MOSFET P-CH 200V 0.4A 4-DIP
|
||
IRFD9210
|
Infineon | 类似代替 |
MOSFET P-CH 200V 0.4A 4-DIP
|
|||
IRFD9210
|
Vishay Semiconductor | 类似代替 | DIP-4 |
MOSFET P-CH 200V 0.4A 4-DIP
|
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