Technical parameters/drain source resistance: 280 mΩ
Technical parameters/dissipated power: 1.3W (Ta)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 570pF @25V(Vds)
Technical parameters/rated power (Max): 1.3 W
Technical parameters/dissipated power (Max): 1.3W (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9020
|
VISHAY | 类似代替 | DIP-4 |
MOSFET P-CH 60V 1.6A 4-DIP
|
||
IRFD9020
|
IRF | 类似代替 |
MOSFET P-CH 60V 1.6A 4-DIP
|
|||
IRFD9020
|
Infineon | 类似代替 |
MOSFET P-CH 60V 1.6A 4-DIP
|
|||
IRFD9020
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 60V 1.6A 4-DIP
|
|||
IRFD9020
|
Vishay Siliconix | 类似代替 | HVMDIP-4 |
MOSFET P-CH 60V 1.6A 4-DIP
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review