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Model IRFD220
Description MOSFET N-CH 200V 800mA 4-DIP
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Brand: Vishay Siliconix
Packaging DIP-4
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1278) Minimum order quantity(1)
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Technical parameters/dissipated power: 1W (Ta)

Technical parameters/drain source voltage (Vds): 200 V

Technical parameters/Input capacitance (Ciss): 260pF @25V(Vds)

Technical parameters/dissipated power (Max): 1W (Ta)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: DIP-4

External dimensions/packaging: DIP-4

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFD220 IRFD220 Vishay Siliconix 功能相似 DIP-4
0.8A ， 200V ， 0.800 Ohm的N通道功率MOSFET 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET
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IRFD220 IRFD220 Intersil 功能相似 DIP
0.8A ， 200V ， 0.800 Ohm的N通道功率MOSFET 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET
IRFD220PBF IRFD220PBF Vishay Intertechnology 完全替代
MOSFET N-CH 200V 800mA 4-DIP
IRFD220PBF IRFD220PBF Vishay Semiconductor 完全替代 DIP
MOSFET N-CH 200V 800mA 4-DIP
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IRFD220PBF IRFD220PBF VISHAY 完全替代 DIP-4
MOSFET N-CH 200V 800mA 4-DIP
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