Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -1.10 A
Technical parameters/polarity: P-Channel
Technical parameters/leakage source breakdown voltage: -50.0 V
Technical parameters/Continuous drain current (Ids): -1.10 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9010
|
Vishay Semiconductor | 完全替代 | DIP |
MOSFET P-CH 50V 1.1A 4-DIP
|
||
IRFD9010
|
Infineon | 完全替代 | HexDIP |
MOSFET P-CH 50V 1.1A 4-DIP
|
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