Technical parameters/dissipated power: 1W (Ta)
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Input capacitance (Ciss): 260pF @25V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/dissipated power (Max): 1W (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD224
|
VISHAY | 完全替代 | HVMDIP |
Mosfet n-Ch 250V 630mA 4-Dip
|
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